RT info:eu-repo/semantics/article
T1 Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition
A1 Kukli, Kaupo
A1 Aarik, Lauri
A1 Vinuesa Sanz, Guillermo
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 García, Héctor
A1 Kasikov, Aarne
A1 Ritslaid, Peeter
A1 Piirsoo, Helle-Mai
A1 Aarik, Jaan
K1 hafnium oxide
K1 praseodymium oxide
K1 atomic layer deposition
K1 crystal structure
K1 dielectric properties
K1 resistive switching
AB Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO2 films. The HfO2 reference films crystallized in the stable monoclinic phase of HfO2. Mixing HfO2 and PrOx resulted in the growth of nanocrystalline metastable tetragonal HfO2. The highest relative permittivities reaching 37–40 were measured for the films with tetragonal structures that were grown using HfO2:PrOx cycle ratio of 5:1 and possessed Pr/(Pr + Hf) atomic ratios of 0.09–0.10. All the HfO2:PrOx films exhibited resistive switching behavior. Lower commutation voltages and current values, promising in terms of reduced power consumption, were achieved for the films grown with HfO2:PrOx cycle ratios of 3:1 and 2:1 and showing Pr/(Pr + Hf) atomic ratios of 0.16–0.23. Differently from the undoped HfO2 films, the Pr-doped films showed low variability of resistance state currents and stable endurance behavior, extending over 104 switching cycles.
PB MDPI
SN 1996-1944
YR 2022
FD 2022
LK https://uvadoc.uva.es/handle/10324/66146
UL https://uvadoc.uva.es/handle/10324/66146
LA spa
NO Materials 2022, Atomic Layer Deposition: From Fundamentals to Applications: 15(3), 877
NO Producción Científica
DS UVaDOC
RD 27-dic-2024