RT info:eu-repo/semantics/conferenceObject
T1 Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge
A1 Jiménez-Molinos, F.
A1 García García, Héctor
A1 González, M.B.
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Miranda, E.
A1 Campabadal, F.
A1 Roldán, J.B.
K1 Memristor
K1 Resistive-switching device
K1 Set/reset processes
K1 Capacitor
AB Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.
PB Institute of Electrical and Electronics Engineers
SN 978-1-6654-4452-1
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/66147
UL https://uvadoc.uva.es/handle/10324/66147
LA eng
NO 13th Spanish Conference on Electron Devices (CDE), Sevilla, Spain, 2021, p. 4-7
NO Producción Científica
DS UVaDOC
RD 24-nov-2024