RT info:eu-repo/semantics/article
T1 Inhomogeneous HfO2 layer growth at atomic layer deposition
A1 Kasikov, Aarne
A1 Tarre, Aivar
A1 Vinuesa, Guillermo
K1 hafnium thin films
K1 spectroscopic ellipsometry
K1 growth inhomogeneity
K1 atomic layer deposition
K1 packing density
K1 resistive switching
K1 filament formation
AB Thin HfO2 films atomic layer deposited from hafnium alkyl amide and oxygen plasma were analysed using spectroscopic ellipsometry and X-ray reflectivity. Low refractive index of the material for samples with less than 30 nm thickness marks the index inhomogeneity at the first stage of growth. The transition from rising density to a more stable growth takes place at about 10 to 25 nm film thickness. HfO2 films used for resistive switching experiments demonstrate either clockwise or counterclockwise behaviour depending on the film thickness. The reason for this may be the disruption of the conductive filament at different metal-insulator interfaces, which could be favoured by several mechanisms.
PB Sciendo
SN 1335-3632
YR 2023
FD 2023
LK https://uvadoc.uva.es/handle/10324/66161
UL https://uvadoc.uva.es/handle/10324/66161
LA spa
NO Journal of Electrical Engineering VOLUME 74 (2023): ISSUE 4 (AUGUST 2023)
NO Producción Científica
DS UVaDOC
RD 17-jul-2024