RT info:eu-repo/semantics/article
T1 A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
A1 Maldonado, D.
A1 Vinuesa Sanz, Guillermo
A1 Aldana, S.
A1 Aguirre, F.L.
A1 Cantudo, A.
A1 García, H.
A1 González, M.B.
A1 Jiménez-Molinos, F.
A1 Campabadal, F.
A1 Miranda, E.
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Roldán, J.B.
K1 Resistive switching
K1 RRAM
K1 Operation dynamics
K1 Characterization
K1 Kinetic Monte Carlo
K1 Compact modeling
AB The switching dynamics of TiN/Ti/HfO2/W-based resistive memories is investigated. The analysis consisted in the systematic application of voltage sweeps with different ramp rates and temperatures. The obtained results give clear insight into the role played by transient and thermal effects on the device operation. Both kinetic Monte Carlo simulations and a compact modeling approach based on the Dynamic Memdiode Model are considered in this work with the aim of assessing, in terms of their respective scopes, the nature of the physical processes that characterize the formation and rupture of the filamentary conducting channel spanning the oxide film. As a result of this study, a better understanding of the different facets of the resistive switching dynamics is achieved. It is shown that the temperature and, mainly, the applied electric field, control the switching mechanism of our devices. The Dynamic Memdiode Model, being a behavioral analytic approach, is shown to be particularly suitable for reproducing the conduction characteristics of our devices using a single set of parameters for the different operation regimes.
PB ELSEVIER
SN 1369-8001
YR 2024
FD 2024
LK https://uvadoc.uva.es/handle/10324/66208
UL https://uvadoc.uva.es/handle/10324/66208
LA eng
NO Volume 169, January 2024, 107878
NO Producción Científica
DS UVaDOC
RD 21-dic-2024