RT info:eu-repo/semantics/article
T1 Standards for the Characterization of Endurance in Resistive Switching Devices
A1 Lanza, Mario
A1 Waser, Rainer
A1 Ielmini, Daniele
A1 Yang, J. Joshua
A1 Goux, Ludovic
A1 Suñe, Jordi
A1 Kenyon, Anthony Joseph
A1 Mehonic, Adnan
A1 Spiga, Sabina
A1 Rana, Vikas
A1 Wiefels, Stefan
A1 Menzel, Stephan
A1 Valov, Ilia
A1 Villena, Marco A.
A1 Miranda, Enrique
A1 Jing, Xu
A1 Campabadal, Francesca
A1 Gonzalez, Mireia B.
A1 Aguirre, Fernando
A1 Palumbo, Felix
A1 Zhu, Kaichen
A1 Roldan, Juan Bautista
A1 Puglisi, Francesco Maria
A1 Larcher, Luca
A1 Hou, Tuo-Hung
A1 Prodromakis, Themis
A1 Yang, Yuchao
A1 Huang, Peng
A1 Wan, Tianqing
A1 Chai, Yang
A1 Pey, Kin Leong
A1 Raghavan, Nagarajan
A1 Dueñas, Salvador
A1 Wang, Tao
A1 Xia, Qiangfei
A1 Pazos, Sebastian
K1 Resistive
K1 Switching
K1 Memristor
K1 Memory
K1 Variability
K1 Reliability
K1 Characterization
K1 Metal-oxide
K1 Endurance
AB Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
PB American Chemical Society
SN 1936-0851
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/66210
UL https://uvadoc.uva.es/handle/10324/66210
LA eng
NO ACS Nano, 2021, Vol. 15, n.11, p. 17214-17231
NO Producción Científica
DS UVaDOC
RD 11-jul-2024