RT info:eu-repo/semantics/article
T1 Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices
A1 García, Héctor
A1 Boo, Jonathan
A1 Vinuesa Sanz, Guillermo
A1 G. Ossorio, Óscar
A1 Sahelices, Benjamín
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 González, Mireia B.
A1 Campabadal, Francesca
K1 Resistive-switching
K1 ReRAM devices
K1 Neuromorphic computing
K1 Conduction mechanisms
AB In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures.
PB Multidisciplinary Digital Publishing Institute
SN 2079-9292
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/66211
UL https://uvadoc.uva.es/handle/10324/66211
LA eng
NO Electronics, 2021, Vol.10, n.22, p.2816
NO Producción Científica
DS UVaDOC
RD 22-nov-2024