RT info:eu-repo/semantics/conferenceObject
T1 Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors
A1 Jimenez-Molinos, F.
A1 Vinuesa, G.
A1 García, H.
A1 Tarre, A.
A1 Tamm, A.
A1 Kalam, K.
A1 Kukli, K.
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 González, M.B.
A1 Campabadal, F.
A1 Maldonado, D.
A1 Cantudo, A.
A1 Roldán, J.B.
K1 memristor
K1 thermal dependence
K1 resistive switching
AB The thermal dependence of the resistance in the low resistance state of TiN/Ti/HfO 2 /Pt memristors has been experimentally studied. After modeling the measured I-V curves, the different resistive components (ohmic and non-linear) have been extracted and their thermal behavior estimated. Finally, the intrinsic series resistance linked to the metallic paths, contacts, and the remnants of the filament during resistive switching is also obtained at different temperatures. The results can be employed to propose physically-based models for circuit simulation.
PB Institute of Electrical and Electronics Engineers (IEEE Xplore)
SN 979-8-3503-0241-7
YR 2023
FD 2023
LK https://uvadoc.uva.es/handle/10324/66235
UL https://uvadoc.uva.es/handle/10324/66235
LA eng
NO 2023 14th Spanish Conference on Electron Devices (CDE)
NO Producción Científica
DS UVaDOC
RD 27-jul-2024