RT info:eu-repo/semantics/conferenceObject
T1 First Principles Characterization of PnVm Clusters in Crystalline Silicon
A1 Santos Tejido, Iván
A1 Aboy Cebrián, María
A1 López Martín, Pedro
A1 Marqués Cuesta, Luis Alberto
A1 Martín Encinar, Luis
A1 Pelaz Montes, María Lourdes
K1 Phosphorous-vacancy clusters
K1 Ab initio calculations
K1 Dipole moments
K1 Microwave annealing
K1 Crystalline Si
K1 2202.03 Electricidad
AB We used ab initio calculations to characterize PnVm(n=1−6,m=1,2) clusters in crystalline Si by calculating their formation energy, dipole moment and local vibrational modes. This information served us to discuss which PnVm complexes might be more relevant in doping during epitaxial growth or by ion implantation, and their possible behavior under microwave annealing treatments that was recently demonstrated as a promising process in technological nodes beyond 3 nm.
PB Institute of Electrical and Electronics Engineers (IEEE).
SN 979-8-3503-0240-0
YR 2023
FD 2023
LK https://uvadoc.uva.es/handle/10324/66548
UL https://uvadoc.uva.es/handle/10324/66548
LA eng
NO 14 Spanish Conference on Electron Devices (CDE), Valencia, Spain, 2023
NO Producción Científica
DS UVaDOC
RD 23-dic-2024