RT info:eu-repo/semantics/conferenceObject
T1 Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2×1 Substrates
A1 Martín Encinar, Luis
A1 Marqués Cuesta, Luis Alberto
A1 Aboy Cebrián, María
A1 López Martín, Pedro
A1 Santos Tejido, Iván
A1 Pelaz Montes, María Lourdes
K1 Temperature dependence
K1 Three-dimensional displays
K1 Films
K1 Surface morphology
K1 Germanium
K1 Semiconductor process modeling
K1 Epitaxial growth
K1 Molecular dynamics
K1 GeSi
K1 Stress relaxation
K1 Intermixing
K1 Dislocations
K1 2202.03 Electricidad
AB We studied epitaxial growth of Ge films on Si(001) 2×1 at different temperatures using classical molecular dynamics simulations. Ge-Si intermixing contributes to strain accommodation mostly in the original Si substrate surface and first grown Ge layer. Stress accumulation is further released by the generation of dislocations whose amount and type depend on temperature. At high temperatures, a larger amount and more variety of dislocations are formed, thus affecting the surface morphology and consequently the size of 3D islands.
PB Institute of Electrical and Electronics Engineers (IEEE)
SN 979-8-3503-0240-0
YR 2023
FD 2023
LK https://uvadoc.uva.es/handle/10324/66550
UL https://uvadoc.uva.es/handle/10324/66550
LA eng
NO 14th Spanish Conference on Electron Devices (CDE), Valencia, Spain, 2023
NO Producción Científica
DS UVaDOC
RD 11-may-2024