RT info:eu-repo/semantics/article
T1 On the asymmetry of resistive switching transitions
A1 Vinuesa Sanz, Guillermo
A1 García García, Héctor
A1 Pérez, Eduardo
A1 Wenger, Christian
A1 Íñiguez de la Torre, Ignacio
A1 González, Tomás
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
K1 Electric resistors
K1 Resistencias eléctricas
K1 Switching circuits
K1 Circuitos de conmutación
K1 Nonvolatile random-access memory
K1 Memristors
K1 Temperature dependence
K1 Energy consumption
K1 Energia - Consumo
K1 Economías de energía
K1 Electronics
K1 2202.03 Electricidad
K1 2203 Electrónica
AB In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal stacks is investigated, mainly focusing on the analysis of set and reset transitions. The electrical measurements in a wide temperature range reveal that the switching transitions require less voltage (and thus, less energy) as temperature rises, with the reset process being much more temperature sensitive. The main conduction mechanism in both resistance states is Space-charge-limited Conduction, but the high conductivity state also shows Schottky emission, explaining its temperature dependence. Moreover, the temporal evolution of these transitions reveals clear differences between them, as their current transient response is completely different. While the set is sudden, the reset process development is clearly non-linear, closely resembling a sigmoid function. This asymmetry between switching processes is of extreme importance in the manipulation and control of the multi-level characteristics and has clear implications in the possible applications of resistive switching devices in neuromorphic computing.
PB MDPI
SN 2079-9292
YR 2024
FD 2024
LK https://uvadoc.uva.es/handle/10324/70425
UL https://uvadoc.uva.es/handle/10324/70425
LA eng
NO Electronics, 2024, Vol. 13, Nº. 13, 2639
NO Producción Científica
DS UVaDOC
RD 23-dic-2024