RT info:eu-repo/semantics/masterThesis
T1 Characterization of nanowires for qubit fabrication based on Silicon technology using Raman spectroscopy
A1 González Guirado, Ginés
A2 Universidad de Valladolid. Facultad de Ciencias
K1 Raman spectroscopy
K1 Qubits
K1 Silicon nanowires
AB The advancement of quantum computing facilities necessitates the scalable development of reliablequbit platforms, which is currently at the forefront of research efforts by major industrialplayers such as Google, Amazon, and Intel. One of the most promising strategies to addressthis challenge involves adapting current silicon nanoelectronics chip technology to meet the requirementsfor semiconductor qubit fabrication. This adaptation utilizes either electron or holespin-orbit coupling in semiconductors, along with gates to control, read, and manipulate spinstates electrically.This approach demands state-of-the-art fabrication processes that meticulously control theroughness, strain, doping, and positioning of semiconductor nanowires, two-dimensional semiconductorand oxide layers, and metallic gates.In this Master’s thesis, we report a micro-Raman investigation of silicon nanowires and chipswithin the framework of a Spanish national research program aimed at developing the firstSpanish scalable qubit fabrication platform based on silicon technologies, in collaboration withthe Barcelona Microelectronics Institute - CSIC.To achieve this, hyperspectral maps and spectral profiles were obtained using two different laserwavelengths on both polycrystalline and monocrystalline silicon nanowire layers deposited on asingle-crystal silicon substrate covered with thermal oxide. In all cases, the Raman spectrumis dominated by the signal from the silicon substrate, presenting a challenge in identifying thecharacteristics of the silicon nanowire, which are of interest for this project.A careful combination of polarization studies and intentional laser heating of the uppermostlayer, along with a unique fitting strategy developed in Python during this Master’s thesis,provided a method to characterize the main features of the nanowire layer with submicronresolution. This method represents the primary result of the current thesis and will be appliedin the future to analyze further steps in the quest for the fabrication of scalable semiconductorqubit platforms.
YR 2024
FD 2024
LK https://uvadoc.uva.es/handle/10324/71197
UL https://uvadoc.uva.es/handle/10324/71197
LA eng
NO Departamento de Física de la Materia Condensada, Cristalografía y Mineralogía
DS UVaDOC
RD 27-nov-2024