RT info:eu-repo/semantics/article
T1 Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature
A1 Mistroni, Alberto
A1 Jia, Ruolan
A1 Dorai Swamy Reddy, Keerthi
A1 Reichmann, Felix
A1 Wenger, Christian
A1 Perez, Eduardo
A1 Castán Lanaspa, María Helena
A1 Perez-Bosch Quesada, Emilio
A1 Dueñas Carazo, Salvador
K1 1T1R , CMOS , cryogenic temperatures , HfO2 , resistive switching , RRAM
K1 Cryogenics
K1 Logic gates
K1 Switches
K1 MOSFET
K1 Voltage measurement
K1 Switching circuits
K1 Resistance
K1 Hafnium oxide
K1 Current measurement
K1 Transmission electron microscopy
K1 1T1R
K1 CMOS
K1 Cryogenic temperatures
K1 HfO2
K1 Resistive switching
K1 RRAM
K1 2203 Electrónica
K1 3307.91 Microelectrónica. Tecnología del Silicio
K1 electrónica
AB Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell.
PB IEEE: Institute of Electrical and Electronics Engineers
SN 0741-3106
YR 2024
FD 2024
LK https://uvadoc.uva.es/handle/10324/73756
UL https://uvadoc.uva.es/handle/10324/73756
LA eng
NO IEEE Electron Device Letters, vol. 45, no. 12, pp. 2391-2394, Dec. 2024,
NO Producción Científica
DS UVaDOC
RD 22-ene-2025