RT info:eu-repo/semantics/article
T1 Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
A1 Jiménez-Molinos, F.
A1 Tarre, A.
A1 Tamm, A.
A1 Kalam, K.
A1 Kukli, K.
A1 González, M. B.
A1 Campabadal, F.
A1 Roldán, J. B.
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Vinuesa Sanz, Guillermo
A1 García García, Héctor
K1 Memristor
K1 Current-voltage characteristic
K1 Semiconductor device modeling
K1 Electric measurements
K1 Crystallographic defects
K1 Resistive switching
K1 Thin films
K1 Charge transport
K1 2203 Electrónica
K1 3307.90 Microelectrónica
AB TiN/Ti/HfO2/Pt resistive switching devices have been fabricated, measured, and modeled. After programming the devices in the low resistance state, the current–voltage characteristic below the reset switching voltage was measured at different temperatures (from 90 to 350 K). A weak but complex temperature dependence was obtained for several voltage regimes. These memristors belong to a wider set known as valence change memories, whose conductance is determined by the formation of conductive filaments (CFs) linked to a high density of oxygen vacancies in a dielectric sandwiched between two metal electrodes. This usually leads to ohmic conduction in the low resistance state. However, a non-linear current dependence has been also observed in the measured devices, in addition to symmetric current–voltage curves for positive and negative biases in the 0–0.6 V voltage range. Three different thermal dependences have been considered for explaining the whole set of experimental data. Two of them are linked to ohmic filamentary conduction; the CF shows a conductivity enhancement due to thermally activated mechanisms at low temperatures; on the contrary, a CF conductivity degradation is observed at the higher temperatures. Finally, an additional slightly higher value for the non-linear current component as the temperature rises has also been taken into account. A semiempirical compact model has been implemented including these conduction mechanisms and their corresponding temperature dependences, the device has been simulated in LT-Spice and the experimental currents have been correctly reproduced.
PB American Insitute of Physics
SN 0021-8979
YR 2022
FD 2022
LK https://uvadoc.uva.es/handle/10324/73797
UL https://uvadoc.uva.es/handle/10324/73797
LA eng
NO F. Jiménez-Molinos, G. Vinuesa, H. García, A. Tarre, A. Tamm, K. Kalam, K. Kukli, S. Dueñas, H. Castán, M. B. González, F. Campabadal, J. B. Roldán; Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction. J. Appl. Phys. 21 November 2022; 132 (19): 194501. https://doi.org/10.1063/5.0104890
NO Producción Científica
DS UVaDOC
RD 22-ene-2025