RT info:eu-repo/semantics/article
T1 Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors
A1 Vaca Rodríguez, César
A1 Gonzalez, Mireia B.
A1 Castán Lanaspa, María Helena
A1 García García, Héctor
A1 Duenas, Salvador
A1 Campabadal, Francesca
A1 Miranda, Enrique
A1 Bailon, Luis A.
AB Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current–voltage (I–V) curves show a maximum resistance, R0, at zero bias and a minimum value, R∞, at voltages close to reset, which indicates a departure from linearity. A three-parameter model for theI–V curves is reported and its temperature dependence analyzed.
SN 0018-9383
YR 2016
FD 2016
LK https://uvadoc.uva.es/handle/10324/82082
UL https://uvadoc.uva.es/handle/10324/82082
LA eng
NO C. Vaca et al., "Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors," in IEEE Transactions on Electron Devices, vol. 63, no. 5, pp. 1877-1883, May 2016, doi: 10.1109/TED.2016.2546898
NO Producción Científica
DS UVaDOC
RD 23-ene-2026