RT info:eu-repo/semantics/article
T1 Electrical Properties and Nanoresistive Switching of Ni-HfO2-Si Capacitors
A1 García, Héctor
A1 Gonzalez, Mireia
A1 Vaca, Cesar
A1 Castán, Helena
A1 Dueñas, Salvador
A1 Campabadal., Francesca
A1 Miranda, Enrique
A1 Bailon, Luis
AB Ni/HfO2/Si ReRAM devices were extensively characterized. In the pristine state, they show adequate performance with low leakage currents and moderate interfacial state density. Leakage current is dominated by Poole-Frenkel mechanism. Activation energies of conduction processes and soft-optical phonons in the insulator bulk are 80 and 50 meV, respectively. Both are usual values in high-k dielectrics. Devices show unipolar resistive switching behavior, with two well-defined resistance states. They can switch properly at temperatures as low as 77 K. Transitions between both resistance states are electric field and temperature dependent
SN 1938-5862
YR 2016
FD 2016
LK https://uvadoc.uva.es/handle/10324/82107
UL https://uvadoc.uva.es/handle/10324/82107
LA eng
NO García, H., Gonzalez, M., Vaca, C., Castán, H., Dueñas, S., Campabadal., F., Miranda, E., Bailon, L. (2016). Electrical Properties and Nanoresistive Switching of Ni-HfO2-Si Capacitors. ECS Transactions, 72 (2), 335. https://doi.org/10.1149/07202.0335ecst
NO Producción Científica
DS UVaDOC
RD 24-ene-2026