RT info:eu-repo/semantics/article
T1 Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors
A1 García García, Héctor
A1 González, Mireia B.
A1 Vaca Rodríguez, César
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Campabadal Segura, Francesca
A1 Miranda, Enrique
A1 Bailon Vega, Luis Alberto
AB Ni/HfO2/Si ReRAM devices were extensively characterized. In the pristine state, they show adequate performance with low leakage currents and moderate interfacial state density. Leakage current is dominated by Poole-Frenkel mechanism. Activation energies of conduction processes and soft-optical phonons in the insulator bulk are 80 and 50 meV, respectively. Both are usual values in high-k dielectrics. Devices show unipolar resistive switching behavior, with two well-defined resistance states. They can switch properly at temperatures as low as 77 K. Transitions between both resistance states are electric field and temperature dependent
SN 1938-5862
YR 2016
FD 2016
LK https://uvadoc.uva.es/handle/10324/82107
UL https://uvadoc.uva.es/handle/10324/82107
LA eng
NO García, H., Gonzalez, M., Vaca, C., Castán, H., Dueñas, S., Campabadal., F., Miranda, E., Bailon, L. (2016). Electrical Properties and Nanoresistive Switching of Ni-HfO2-Si Capacitors. ECS Transactions, 72 (2), 335. https://doi.org/10.1149/07202.0335ecst
NO Producción Científica
DS UVaDOC
RD 25-mar-2026