RT info:eu-repo/semantics/article
T1 Multilevel conductance modulation in HfO2, Al2O3, and HfO2/Al2O3 bilayer memristors
A1 García, H.
A1 Vinuesa, G.
A1 Val, T.del
A1 Kalam, K.
A1 González, M.B.
A1 Campabadal, F.
A1 Dueñas, S.
A1 Castán, H.
AB Memristors have drawn interest due to their use as artificial synapses in neuromorphic circuits. This work investigates the multilevel conductance modulation in Al2O3 and HfO2-based memristors. Specifically, the control of the depression or reset transition when applying identical consecutive voltage pulses was the main objective. Both pulse amplitude and pulse accumulated time can control the reset transition. Voltage required to reset the device is higher for Al2O3, which can lead to higher energy consumption. However, this material showed better reset transition linearity.
PB Elsevier
SN 0038-1101
YR 2026
FD 2026
LK https://uvadoc.uva.es/handle/10324/82538
UL https://uvadoc.uva.es/handle/10324/82538
LA spa
NO Solid-State Electronics, 2026, 231, 109294
NO Producción Científica
DS UVaDOC
RD 04-feb-2026