RT info:eu-repo/semantics/doctoralThesis
T1 Characterization of heterostructured semiconductors for optoelectronic devices
A1 Mediavilla Martínez, Irene
A2 Universidad de Valladolid. Escuela de Doctorado
K1 Física de la materia condensada
K1 Nanowires
K1 Nanohilos
K1 Raman
K1 22 Física
AB Semiconductors are essential materials for the development of high-performance optoelectronic devices, such as light-emitting diodes (LEDs), photodetectors, solar cells, and laser diodes (LDs). These devices combine electronic and optical signals, converting one into the other through the interaction between light and solids.Progress in this field has been driven by advances in material growth and nanostructure fabrication, which have enabled significant improvements in both efficiency and stability.Miniaturization has played a key role in technological development, leading to nanodevices with dimensions ranging from 1 to 100 nm, where effects associated with low dimensionality emerge, modifying their physical properties compared to their bulk counterparts. Among these, semiconductor nanowires (NWs) stand out as quasi-one-dimensional structures with a high surface-to-volume ratio, capable of acting as optical nanoantennas. Their characteristic geometry allows for easy lattice parameter accommodation, facilitating the formation of heterostructures with tunable bandgaps, thereby optimizing solar spectrum absorption and enhancing efficiency in solar cells and light sensors.The transition to the nanoscale introduces new challenges in characterization, as conventional techniques must be adapted to study extremely small volumes. To address this, advanced optical techniques such as micro-Raman spectroscopy (μ-Raman), micro-photoluminescence (μ-PL), cathodoluminescence (CL), and tip-enhanced Raman spectroscopy (TERS) are employed.In this thesis, the optical properties of axially heterostructured InP–InGaP nanowires for solar cell applications, quantum well structures designed for laser diode (LD) applications (AlGaAs/GaAs), and multiple quantum well structures are investigated. The aforementioned spectroscopic techniques have been utilized to obtain key results for understanding their behavior, demonstrating the potential of these methods to provide nanoscale-resolved information and enabling a more comprehensive and detailed characterization of the studied devices.
YR 2026
FD 2026
LK https://uvadoc.uva.es/handle/10324/84546
UL https://uvadoc.uva.es/handle/10324/84546
LA eng
NO Escuela de Doctorado
DS UVaDOC
RD 14-jul-2026