TY  - JOUR 
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
AU  - García García, Héctor
AU  - González Ossorio, Óscar
AU  - Domínguez, Leidy Azucena
AU  - Sahelices Fernández, Benjamín
AU  - Miranda, E.
AU  - Bargalló González, Mireia
AU  - Campabadal Segura, Francesca
PY  - 2018
SN  - 1089-7550
UR  - http://uvadoc.uva.es/handle/10324/44651
AB  - A thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistance
random access memory (RRAM)] was carried out under different bias conditions and in a wide
range of ac signal frequencies. We demonstrate that a continuum of...
LA  - eng
PB  - AIP Publishing
KW  - Metal oxides
KW  - Óxidos metálicos
KW  - Dielectric properties
KW  - Propiedades dieléctricas
KW  - Thin films
KW  - Láminas delgadas
TI  - Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
DO  - 10.1063/1.5024836
ER  -