TY  - JOUR 
AU  - García García, Héctor
AU  - Dueñas Carazo, Salvador
AU  - González Ossorio, Óscar
AU  - Castán Lanaspa, María Helena
PY  - 2020
SN  - 2168-6734
UR  - http://uvadoc.uva.es/handle/10324/44675
AB  - Due to the high number of reachable conductance levels in resistive switching devices, they
are good candidates to implement artificial synaptic devices. In this work, we have studied the control of
the intermediate conductance levels in HfO2-based...
LA  - spa
PB  - IEEE Xplore
KW  - Conductive filament
KW  - Filamento conductivo
KW  - Multilevel storage
KW  - Almacenamiento multinivel
TI  - Current pulses to control the conductance in RRAM devices
DO  - 10.1109/JEDS.2020.2979293
ER  -