TY  - GEN 
AU  - González Ossorio, Óscar
AU  - Poblador Cester, Samuel
AU  - Vinuesa Sanz, Guillermo
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - Maestro Izquierdo, Marcos
AU  - Bargalló González, Mireia
AU  - Campabadal Segura, Francesca
PY  - 2020
SN  - 978-1-7281-1044-8
UR  - http://uvadoc.uva.es/handle/10324/44719
AB  - Three topologies of TiN/Ti/HfO 2 /W resistive switching memories (RRAM) are proposed in this work: crossbar, isolated and isolated-crossbar configurations. All configurations use the same sequence of technological processes. The different topologies...
LA  - eng
PB  - IEEE Xplore
KW  - Hafnium oxide
KW  - Óxido de hafnio
KW  - RRAM chips
KW  - Chips RRAM
TI  - Single and complex devices on three topological configurations of HfO2 based RRAM
DO  - 10.1109/LAEDC49063.2020.9073596
ER  -