TY  - GEN 
AU  - García García, Héctor
AU  - González Ossorio, Óscar
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
PY  - 2020
SN  - 978-1-7281-1044-8
UR  - http://uvadoc.uva.es/handle/10324/44731
AB  - Artificial synaptic devices used in neuromorphic systems need a high number of reachable conductance levels. Resistive switching devices are promising candidates to implement these devices due to their reachable conductance levels. In this work, we...
LA  - eng
PB  - IEEE Xplore
KW  - Synaptic devices
KW  - Dispositivos sinápticos
KW  - Multilevel storage
KW  - Almacenamiento multinivel
KW  - Hafnium oxide
KW  - Óxido de hafnio
TI  - Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices
DO  - 10.1109/LAEDC49063.2020.9073011
ER  -