TY  - JOUR 
AU  - Tsai, Chun-Hsiung
AU  - Hsu, Yu-Hsiang
AU  - Santos Tejido, Iván
AU  - Pelaz Montes, María Lourdes
AU  - Kowalski, Jeffrey
AU  - Liou, J.W.
AU  - Woon, Wei-Yen
AU  - Lee, Chih-Kung
PY  - 2021
SN  - 1369-8001
UR  - http://uvadoc.uva.es/handle/10324/45124
AB  - Junction stability and donor deactivation in silicon at high doping limit has been a long-standing issue in advanced semiconductor devices. Recently, heavily doped epitaxial Si:P layer with phosphorus concentrations as high as 3 × 1021 at./cm3 has...
LA  - eng
PB  - Elsevier
KW  - Microondas
KW  - Microondas
KW  - Doping
KW  - Dopaje
TI  - Achieving junction stability in heavily doped epitaxial Si:P
DO  - 10.1016/j.mssp.2021.105672
ER  -