TY  - JOUR 
AU  - García García, Héctor
AU  - Bargalló González, Mireia
AU  - Mallol, M. M.
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
AU  - Campabadal Segura, Francesca
AU  - Acero, M. C.
AU  - Sambuco Salomone, L.
AU  - Faigón, A.
PY  - 2018
SN  - 0361-5235
UR  - http://uvadoc.uva.es/handle/10324/45397
AB  - The γ-radiation effects on the electrical characteristics of metal–insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates...
LA  - eng
PB  - Springer Link
KW  - Hafnium oxide
KW  - Óxido de hafnio
KW  - Resistive memories
KW  - Memorias resistivas
TI  - Electrical characterization of defects created by γ-radiation in HfO2-based MIS structures for RRAM applications
DO  - 10.1007/s11664-018-6257-y
ER  -