TY  - JOUR 
AU  - Kalam, Kristjan
AU  - Rammula, Raul
AU  - Ritslaid, Peeter
AU  - Käämbre, Tanel
AU  - Link, Joosep
AU  - Stern, Raivo
AU  - Vinuesa Sanz, Guillermo
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - Tamm, Aile
AU  - Kukli, Kaupo
PY  - 2021
SN  - 1361-6528
UR  - http://uvadoc.uva.es/handle/10324/46598
AB  - Atomic layer deposition method was used to grow thin films consisting of ZrO2 and MnOx layers. All depositions were carried out at 300 ºC. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such...
LA  - eng
PB  - IOP Publishing
KW  - Atomic layer deposition
KW  - Deposición de capas atómicas
KW  - Thin films
KW  - Láminas delgadas
KW  - Magnetic materials
KW  - Materiales magnéticos
KW  - Resistive switching
KW  - Conmutación resistiva
TI  - Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone
DO  - 10.1088/1361-6528/abfee9
ER  -