TY  - JOUR 
AU  - González Ossorio, Óscar
AU  - Vinuesa Sanz, Guillermo
AU  - García García, Héctor
AU  - Sahelices Fernández, Benjamín
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - Pérez, Eduardo
AU  - Kalishettyhalli Mahadevaiah, Mamathamba
AU  - Wenger, Christian
PY  - 2021
SN  - 1938-5862
UR  - https://uvadoc.uva.es/handle/10324/48621
AB  - The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile character. They are...
LA  - eng
PB  - Electrochemical Society
KW  - RRAM
KW  - Hafnium oxide
KW  - Óxido de hafnio
KW  - Neuromorphic Applications
KW  - Aplicaciones neuromórficas
TI  - Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications
DO  - 10.1149/10202.0029ecst
ER  -