TY  - JOUR 
AU  - García García, Héctor
AU  - Vinuesa Sanz, Guillermo
AU  - González Ossorio, Óscar
AU  - Sahelices Fernández, Benjamín
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
AU  - Bargalló González, Mireia
AU  - Campabadal Segura, Francesca
PY  - 2021
SN  - 0038-1101
UR  - https://uvadoc.uva.es/handle/10324/48639
AB  - In  this  work,  we  have  studied  the  set  and  the  reset  transitions  in  hafnium  oxide-based 
metal-insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a 
conventional  voltage  or  current  signal,  we  have ...
LA  - eng
PB  - Elsevier
KW  - ReRAM devices
KW  - Electrical characterization
KW  - Hafnium oxide
TI  - Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
DO  - 10.1016/j.sse.2021.108113
ER  -