TY  - JOUR 
AU  - Vinuesa Sanz, Guillermo
AU  - García García, Héctor
AU  - Lendínez Sánchez, José Miguel
AU  - García Ochoa, Eduardo
AU  - González, M. B.
AU  - Maldonado, D
AU  - Aguilera Pedregosa, C
AU  - Moreno, E
AU  - Jiménez Molinos, Francisco
AU  - Roldán, J.B.
AU  - Campabadal Segura, Francesca
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
PY  - 2023
SN  - 0167-9317
UR  - https://uvadoc.uva.es/handle/10324/59155
AB  - In this work, the unipolar resistive switching behaviour of Ni/HfO2/Si(n+) devices is studied. The structures are characterized using both current and voltage sweeps, with the device resistance and its cycle-to-cycle variability being analysed in each...
LA  - eng
PB  - Elsevier
KW  - Electricidad
KW  - Electrónica
KW  - Computers
KW  - Resistive switching
KW  - Hafnium oxide
KW  - Current control
KW  - RRAM
KW  - Conmutación por resistencia
KW  - Óxido de hafnio
KW  - Control de corriente
KW  - Memoria RAM
TI  - Variability and power enhancement of current controlled resistive switching devices
DO  - 10.1016/j.mee.2023.112008
ER  -