TY  - JOUR 
AU  - Vinuesa, Guillermo
AU  - García, Héctor
AU  - González, Mireia B.
AU  - Kalam, Kristjan
AU  - Zabala, Miguel
AU  - Tarre, Aivar
AU  - Kukli, Kaupo
AU  - Tamm, Aile
AU  - Campabadal, Francesca
AU  - Jiménez, Juan
AU  - Castán, Helena
AU  - Dueñas, Salvador
PY  - 2022
SN  - 2079-9292
UR  - https://uvadoc.uva.es/handle/10324/66143
AB  - In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was...
LA  - spa
PB  - MDPI
KW  - resistive switching
KW  - thickness dependence
KW  - conductive filaments
KW  - RRAM
KW  - polarity change
KW  - hafnium oxide
TI  - Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
DO  - 10.3390/electronics11030479
ER  -