TY  - JOUR 
AU  - García, Héctor
AU  - Boo, Jonathan
AU  - Vinuesa Sanz, Guillermo
AU  - G. Ossorio, Óscar
AU  - Sahelices, Benjamín
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - González, Mireia B.
AU  - Campabadal, Francesca
PY  - 2021
SN  - 2079-9292
UR  - https://uvadoc.uva.es/handle/10324/66211
AB  - In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After...
LA  - eng
PB  - Multidisciplinary Digital Publishing Institute
KW  - Resistive-switching
KW  - ReRAM devices
KW  - Neuromorphic computing
KW  - Conduction mechanisms
TI  - Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices
DO  - 10.3390/electronics10222816
ER  -