TY  - CHAP 
AU  - Castán, H.
AU  - Dueñas, S.
AU  - Sardiña, A.
AU  - García, H.
AU  - Arroval, T.
AU  - Tamm, A.
AU  - Jõgiaas, T.
AU  - Kukli, K.
AU  - Aarik, J.
PY  - 2017
SN  - 978-953-51-3068-0
UR  - https://uvadoc.uva.es/handle/10324/66228
AB  - Resistive switching phenomena with adequate repetitiveness on Ta2O5-TiO2-Ta2O5 and TiO2-Ta2O5-TiO2 stacks are reported. In particular, 5–nm-thick TiO2 films embedding a monolayer of Ta2O5 show the best behavior in terms of bipolar cycles loop width,...
LA  - eng
PB  - InetchOpen
KW  - resistive switching
KW  - tantalum oxide
KW  - titanium oxide
KW  - RF impedance
KW  - modeling
TI  - RRAM Memories with ALD High-K Dielectrics: Electrical Characterization and Analytical Modeling
ER  -