TY  - JOUR 
AU  - Vinuesa Sanz, Guillermo
AU  - García García, Héctor
AU  - Pérez, Eduardo
AU  - Wenger, Christian
AU  - Íñiguez de la Torre, Ignacio
AU  - González, Tomás
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
PY  - 2024
SN  - 2079-9292
UR  - https://uvadoc.uva.es/handle/10324/70425
AB  - In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal stacks is investigated, mainly focusing on the analysis of set and reset transitions. The electrical measurements in a wide temperature range reveal that the...
LA  - eng
PB  - MDPI
KW  - Electric resistors
KW  - Resistencias eléctricas
KW  - Switching circuits
KW  - Circuitos de conmutación
KW  - Nonvolatile random-access memory
KW  - Memristors
KW  - Temperature dependence
KW  - Energy consumption
KW  - Energia - Consumo
KW  - Economías de energía
KW  - Electronics
TI  - On the asymmetry of resistive switching transitions
DO  - 10.3390/electronics13132639
ER  -