TY  - JOUR 
AU  - Aguirre, F L
AU  - González, M B
AU  - Jiménez-Molinos, F
AU  - Campabadal, F
AU  - Roldán, J B
AU  - Miranda, E
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
AU  - García García, Héctor
AU  - García-Ochoa, E.
AU  - Vinuesa Sanz, Guillermo
PY  - 2023
SN  - 0022-3727
UR  - https://uvadoc.uva.es/handle/10324/73799
AB  - Memristive devices have shown a great potential for non-volatile memory circuits and neuromorphic computing. For both applications it is essential to know the physical mechanisms behind resistive switching; in particular, the time response to external...
LA  - eng
PB  - IOP Publishing
KW  - Resistive switching
KW  - Electrical characterization
KW  - Memristor
KW  - Memdiode model
TI  - Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
DO  - 10.1088/1361-6463/acdae0
ER  -