TY  - JOUR 
AU  - Aboy Cebrián, María
AU  - Pelaz Montes, María Lourdes
AU  - López Martín, Pedro
AU  - Bruno, Elena
AU  - Mirabella, Salvo
PY  - 2010
SN  - 0894-3370
UR  - http://uvadoc.uva.es/handle/10324/31966
AB  - In this paper we discuss from an atomistic point of view some of the issues involved in the modeling of electrical characteristics evolution in silicon devices as a result of ion implantation and annealing processes in silicon. In particular,...
LA  - eng
PB  - Wiley
KW  - Silicio
KW  - Iones
KW  - Silicon
KW  - Ion implantation
TI  - Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions
DO  - https://doi.org/10.1002/jnm.737
ER  -