TY  - GEN 
AU  - Martín Encinar, Luis
AU  - Santos Tejido, Iván
AU  - López Martín, Pedro
AU  - Marqués Cuesta, Luis Alberto
AU  - Aboy Cebrián, María
AU  - Pelaz Montes, María Lourdes
PY  - 2019
SN  - 978-1-5386-5779-9
UR  - http://uvadoc.uva.es/handle/10324/33903
AB  - We used classical molecular dynamics simulations to reproduce basic properties of Si, Ge and SiGe using different empirical potentials available in the literature. The empirical potential that offered the better compromise with experimental data was...
LA  - eng
PB  - Institute of Electrical and Electronics Engineers (IEEE).
KW  - Simulaciones de dinámica molecular
KW  - Molecular dynamics simulations
TI  - Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential
T2  - Spanish Conference on Electron Devices (CDE 2018)
DO  - https://doi.org/10.1109/CDE.2018.8597030
ER  -