TY  - JOUR 
AU  - Kalam, Kristjan
AU  - Seemen, Helina
AU  - Mikkor, Mats
AU  - Ritslaid, Peeter
AU  - Stern, Raivo
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - Tamm, Aile
AU  - Kukli, Kaupo
PY  - 2018
SN  - 2162-8777
UR  - http://uvadoc.uva.es/handle/10324/44663
AB  - Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirconia films were doped with hafnia and vice versa, and also nanolaminates were formed. All depositions were carried out at 300°C. Most films were...
LA  - eng
PB  - IOP Publishing
KW  - Thin films
KW  - Láminas delgadas
KW  - Atomic layer deposition
KW  - Deposición atómica de capas
TI  - Electric and magnetic properties of atomic layer deposited ZrO2-HfO2 thin films
DO  - 10.1149/2.0041809jss
ER  -