TY  - GEN 
AU  - González Ossorio, Óscar
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - Tamm, Aile
AU  - Kalam, Kristjan
AU  - Seemen, Helina
AU  - Kukli, Kaupo
PY  - 2018
SN  - 978-1-5386-5779-9
UR  - http://uvadoc.uva.es/handle/10324/44677
AB  - In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC parameters. Thin films...
LA  - eng
PB  - IEEE Xplore
KW  - Electrical characterization
KW  - Caracterización eléctrica
KW  - Atomic layer deposition
KW  - Deposición atómica de capas
KW  - Resistive switching
KW  - Conmutación resistiva
TI  - Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films
DO  - 10.1109/CDE.2018.8596925
ER  -