TY  - JOUR 
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - García García, Héctor
AU  - González Ossorio, Óscar
AU  - Domínguez, Leidy Azucena
AU  - Seemen, Helina
AU  - Tamm, Aile
AU  - Kukli, Kaupo
AU  - Aarik, Jaan
PY  - 2018
SN  - 1543-186X
UR  - http://uvadoc.uva.es/handle/10324/45137
AB  - We describe the role of defects in the resistive switching behavior of metal–insulator–metal devices based on alternating Ta2O5 and TiO2 stacks. Ruthenium oxide (RuOx) and platinum (Pt) were used as bottom and top electrodes, respectively. Insulator...
LA  - eng
PB  - Springer Link
KW  - Resistive switching
KW  - Conmutación resistiva
KW  - Tantalum oxide
KW  - Pentóxido de tántalo
KW  - Titanium oxide
KW  - Óxido de titanio
TI  - The role of defects in the resistive switching behavior of Ta2O5-TiO2-based metal–insulator–metal (MIM) devices for memory applications
DO  - 10.1007/s11664-018-6105-0
ER  -