TY  - JOUR 
AU  - García García, Héctor
AU  - González Ossorio, Óscar
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
PY  - 2019
SN  - 0167-9317
UR  - http://uvadoc.uva.es/handle/10324/45394
AB  - RRAM devices are promising candidates to implement artificial synaptic devices for their use in neuromorphic systems, due to their high number or reachable conductance levels. The capacitors used in this work (TiN/Ti/ HfO2/W) show resistive switching...
LA  - eng
PB  - Elsevier
KW  - Resistive memories
KW  - Memorias resistivas
KW  - Synaptic devices
KW  - Dispositivos sinápticos
TI  - Controlling the intermediate conductance states in RRAM devices for synaptic applications
DO  - 10.1016/j.mee.2019.110984
ER  -