TY  - JOUR 
AU  - Vinuesa Sanz, Guillermo
AU  - González Ossorio, Óscar
AU  - García García, Héctor
AU  - Sahelices Fernández, Benjamín
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
AU  - Kukli, Kaupo
AU  - Kull, M
AU  - Tarre, Aivar
AU  - Jõgiaas, Taivo
AU  - Tamm, Aile
AU  - Kasikov, Aarne
PY  - 2021
SN  - 0038-1101
UR  - https://uvadoc.uva.es/handle/10324/48633
AB  - Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer...
LA  - eng
PB  - Elsevier
KW  - RRAM
KW  - Hafnium oxide
KW  - Aluminium oxide
KW  - Hafnium-aluminum oxide
TI  - Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
DO  - 10.1016/j.sse.2021.108085
ER  -