TY  - JOUR 
AU  - Tsai, Chun-Hsiung
AU  - Savant, Chandrashekhar P.
AU  - Asadi, Mohammad Javad
AU  - Lin, Yu-Ming
AU  - Santos Tejido, Iván
AU  - Hsu, Yu-Hsiang
AU  - Kowalski, Jeffrey
AU  - Pelaz Montes, María Lourdes
AU  - Woon, Wei-Yen
AU  - Lee, Chih-Kung
AU  - Hwang, James C. M.
PY  - 2022
SN  - 0003-6951
UR  - https://uvadoc.uva.es/handle/10324/54389
AB  - The relentless scaling of semiconductor devices pushes the doping level far above the equilibrium solubility, yet the doped material must be sufficiently stable for subsequent device fabrication and operation. For example, in epitaxial silicon doped...
LA  - eng
PB  - American Institute of Physics
KW  - Nanoláminas de silicio
KW  - Silicon nanosheets
TI  - Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit
DO  - 10.1063/5.0099083
ER  -