TY  - JOUR 
AU  - Vinuesa Sanz, Guillermo
AU  - García García, Héctor
AU  - Bargalló González, Mireia
AU  - Kalam, Kristjan
AU  - Zabala, Miguel
AU  - Tarre, Aivar
AU  - Kukli, Kaupo
AU  - Tamm, Aile
AU  - Campabadal Segura, Francesca
AU  - Jiménez López, Juan Ignacio
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
PY  - 2022
SN  - 2079-9292
UR  - https://uvadoc.uva.es/handle/10324/62092
AB  - In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was...
LA  - eng
PB  - MDPI
KW  - Resistive switching
KW  - Switching circuits
KW  - Circuitos eléctricos
KW  - Electric resistors
KW  - Resistencias eléctricas
KW  - Conductive filament
KW  - Nonvolatile random-access memory
KW  - Memoria de acceso aleatorio no volátil
KW  - Polarity
KW  - Oxide
KW  - Hafnium
KW  - Electronics
KW  - Electricity
TI  - Effect of dielectric thickness on resistive switching polarity in TiN/Ti/HfO2/Pt stacks
DO  - 10.3390/electronics11030479
ER  -