TY  - GEN 
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - González Ossorio, Óscar
AU  - Domínguez, L.A.
AU  - García García, Héctor
AU  - Kalam, K.
AU  - Ritala, M.
AU  - Leskelä, M.
PY  - 2018
SN  - 978-1-5386-5108-7
UR  - https://uvadoc.uva.es/handle/10324/65996
AB  - The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermediate states between the...
LA  - eng
PB  - Institute of Electrical and Electronics Engineers
KW  - Resistive memories
KW  - Admittance memory cycles
KW  - Ta2O5:ZrO2 ALD films
TI  - Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
DO  - 10.1109/DCIS.2017.8311627
ER  -