TY  - GEN 
AU  - Jiménez-Molinos, F.
AU  - García García, Héctor
AU  - González, M.B.
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - Miranda, E.
AU  - Campabadal, F.
AU  - Roldán, J.B.
PY  - 2021
SN  - 978-1-6654-4452-1
UR  - https://uvadoc.uva.es/handle/10324/66147
AB  - Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.
LA  - eng
PB  - Institute of Electrical and Electronics Engineers
KW  - Memristor
KW  - Resistive-switching device
KW  - Set/reset processes
KW  - Capacitor
TI  - Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge
DO  - 10.1109/CDE52135.2021.9455756
ER  -