TY  - GEN 
AU  - Martín Encinar, Luis
AU  - Marqués Cuesta, Luis Alberto
AU  - Aboy Cebrián, María
AU  - López Martín, Pedro
AU  - Santos Tejido, Iván
AU  - Pelaz Montes, María Lourdes
PY  - 2023
SN  - 979-8-3503-0240-0
UR  - https://uvadoc.uva.es/handle/10324/66550
AB  - We studied epitaxial growth of Ge films on Si(001) 2×1 at different temperatures using classical molecular dynamics simulations. Ge-Si intermixing contributes to strain accommodation mostly in the original Si substrate surface and first grown Ge...
LA  - eng
PB  - Institute of Electrical and Electronics Engineers (IEEE)
KW  - Temperature dependence
KW  - Three-dimensional displays
KW  - Films
KW  - Surface morphology
KW  - Germanium
KW  - Semiconductor process modeling
KW  - Epitaxial growth
KW  - Molecular dynamics
KW  - GeSi
KW  - Stress relaxation
KW  - Intermixing
KW  - Dislocations
TI  - Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2×1 Substrates
DO  - 10.1109/CDE58627.2023.10339527
ER  -