TY  - JOUR 
AU  - Jiménez-Molinos, F.
AU  - Tarre, A.
AU  - Tamm, A.
AU  - Kalam, K.
AU  - Kukli, K.
AU  - González, M. B.
AU  - Campabadal, F.
AU  - Roldán, J. B.
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - Vinuesa Sanz, Guillermo
AU  - García García, Héctor
PY  - 2022
SN  - 0021-8979
UR  - https://uvadoc.uva.es/handle/10324/73797
AB  - TiN/Ti/HfO2/Pt resistive switching devices have been fabricated, measured, and modeled. After programming the devices in the low resistance state, the current–voltage characteristic below the reset switching voltage was measured at different...
LA  - eng
PB  - American Insitute of Physics
KW  - Memristor
KW  - Current-voltage characteristic
KW  - Semiconductor device modeling
KW  - Electric measurements
KW  - Crystallographic defects
KW  - Resistive switching
KW  - Thin films
KW  - Charge transport
TI  - Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
DO  - 10.1063/5.0104890
ER  -