TY  - JOUR 
AU  - Martín Encinar, Luis
AU  - Marqués Cuesta, Luis Alberto
AU  - Santos Tejido, Iván
AU  - Pelaz Montes, María Lourdes
PY  - 2026
SN  - 0169-4332
UR  - https://uvadoc.uva.es/handle/10324/77892
AB  - We performed classical molecular dynamics simulations to investigate, from an atomistic point of view, the formation of dislocations during the epitaxial growth of Ge on Si. We show that simulations at 900 and 1000 K with deposition rates of 10...
LA  - eng
PB  - Elsevier
KW  - Molecular dynamics
KW  - Dinámica molecular
TI  - Atomistic study of dislocation formation during Ge epitaxy on Si
DO  - 10.1016/j.apsusc.2025.164547
ER  -