TY  - JOUR 
AU  - García García, Héctor
AU  - González, Mireia B.
AU  - Vaca Rodríguez, César
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
AU  - Campabadal Segura, Francesca
AU  - Miranda, Enrique
AU  - Bailon Vega, Luis Alberto
PY  - 2016
SN  - 1938-5862
UR  - https://uvadoc.uva.es/handle/10324/82107
AB  - Ni/HfO2/Si ReRAM devices were extensively characterized. In the pristine state, they show adequate performance with low leakage currents and moderate interfacial state density. Leakage current is dominated by Poole-Frenkel mechanism. Activation...
LA  - eng
TI  - Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors
DO  - 10.1149/07202.0335ecst
ER  -