TY  - JOUR 
AU  - García, Héctor
AU  - Gonzalez, Mireia
AU  - Vaca, Cesar
AU  - Castán, Helena
AU  - Dueñas, Salvador
AU  - Campabadal., Francesca
AU  - Miranda, Enrique
AU  - Bailon, Luis
PY  - 2016
SN  - 1938-5862
UR  - https://uvadoc.uva.es/handle/10324/82107
AB  - Ni/HfO2/Si ReRAM devices were extensively characterized. In the pristine state, they show adequate performance with low leakage currents and moderate interfacial state density. Leakage current is dominated by Poole-Frenkel mechanism. Activation...
LA  - eng
TI  - Electrical Properties and Nanoresistive Switching of Ni-HfO2-Si Capacitors
DO  - 10.1149/07202.0335ecst
ER  -