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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

Aguirre, F L; González, M B; Jiménez-Molinos, F; Campabadal, F; Roldán, J B; Miranda, E; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; García García, Héctor ; García-Ochoa, E.; Vinuesa Sanz, Guillermo (2023)
Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

Jiménez-Molinos, F.; Tarre, A.; Tamm, A.; Kalam, K.; Kukli, K.; González, M. B.; Campabadal, F.; Roldán, J. B.; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Vinuesa Sanz, Guillermo ; García García, Héctor (2022)
Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature

Mistroni, Alberto; Jia, Ruolan; Dorai Swamy Reddy, Keerthi; Reichmann, Felix; Wenger, Christian; Perez, Eduardo; Castán Lanaspa, María Helena ; Perez-Bosch Quesada, Emilio; Dueñas Carazo, Salvador (2024)
On the asymmetry of resistive switching transitions

Vinuesa Sanz, Guillermo ; García García, Héctor ; Pérez, Eduardo; Wenger, Christian; Íñiguez de la Torre, Ignacio; González, Tomás; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena (2024)
Influence of bismuth and cobalt doping on structural, dielectric, and magnetic properties of M-type calcium hexagonal ferrites

Panwar, M.N.; Khan, Hasan M.; Bano, N.; Zahid, Muhammad; Mazhar, Muhammad Ehsan; Bilal, Muhammad; Saleem, Muhammad Imran; Solre, Gideon F.B.; Li, Zhi; Hernández Gómez, Pablo (2024)