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Título
Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition
Autor
Año del Documento
2014
Editorial
American Chemical Society
Descripción
Producción Científica
Documento Fuente
ACS Applied Materials & Interfaces 6, p. 17954-17964 (2014)
Abstract
Modern society is experiencing an ever-increasing demand for energy to power a vast array of electrical and mechanical devices. A significant amount of the energy consumed is used for lighting purposes. For instance, this demand is ~17% of the total energy consumed in the USA in 2011 [1]. Thus, any approach that can reduce energy consumption is important. In this context, the development of light emitting diodes (LEDs) incorporating at least one porous component, with improved light extraction efficiency, is being explored intensively [2]. However, up to now, only partially porous p-n junctions have been analyzed for this purpose.
Materias (normalizadas)
Chemical vapor deposition
ISSN
1944-8244
Revisión por pares
SI
Patrocinador
Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA166A11-2 and VA293U1)
Version del Editor
Idioma
eng
Derechos
openAccess
Collections
Files in this item
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