Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition

Abstract

Modern society is experiencing an ever-increasing demand for energy to power a vast array of electrical and mechanical devices. A significant amount of the energy consumed is used for lighting purposes. For instance, this demand is ~17% of the total energy consumed in the USA in 2011 [1]. Thus, any approach that can reduce energy consumption is important. In this context, the development of light emitting diodes (LEDs) incorporating at least one porous component, with improved light extraction efficiency, is being explored intensively [2]. However, up to now, only partially porous p-n junctions have been analyzed for this purpose.